We develop an uncertainty-aware physics-informed surrogate for a one-dimensional $p$-$n$ junction diode, conditioned on device length, doping and bias.
Using the internal state of the device as predicted by the surrogate we develop a test-suite of quantities of interest including the terminal current, depletion width, peak field and stored charge.
The formalism and the quantities are can be extended to asymmetric junction and two-dimensional diodes as shown by means of benchmark analysis.
For the one-dimensional symmetric junction surrogate, we obtain 0.11% median $L_1$ error on the electrostatic potential, and 1.5% and 0.61% on the electron and hole densities.
Finally, we develop an uncertainty analysis which determines the validity of surrogate answer within the user-specified tolerance.